TIM1414-10LA - Toshiba

TIM1414-10LA Microwave Power GaAs FET

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications (Ta = 25°C) .

Features

• Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level
• High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz
• High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
• Broadband internally matched
• Hermetically sealed package RF Performance Specifications (Ta = 25°C) Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1dB G1dB IDS1 ∆G ηadd IM3 IDS2 ∆Tch Note 1 VDS = 9V f = 14.0 ~ 14.5 GHz Conditio.