TIM1414-10A |
Part Number | TIM1414-10A |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 ... |
Features |
• High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.0 ~ 14.5GHz Condition Unit dBm dB A % °C Min. 40.0 5.0 – – – Typ. 40.5 6.0 4.0 23 – Max – – 5.0 – 90 TIM1414-10A DataShee Electrical Characteristics (Ta = 25° C) Charact... |
Document |
TIM1414-10A Data Sheet
PDF 442.32KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TIM1414-10A-252 |
Toshiba |
Microwave Power GAAS Fet | |
2 | TIM1414-10LA |
Toshiba |
Microwave Power GaAs FET | |
3 | TIM1414-10LA-252 |
Toshiba |
Microwave Power GaAs FET | |
4 | TIM1414-15-253 |
Toshiba |
Microwave Power GaAs FET | |
5 | TIM1414-15L |
Toshiba |
Microwave Power GaAs FET |