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The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. Pad Configuration Pad No. 1-2 3 Backside Sym.
• Frequency Range: DC - 18 GHz
• 40.1 dBm Nominal PSAT at 3 GHz
• 73.3% Maximum PAE
• 21 dB Nominal Power Gain at 3 GHz
• Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 0.82 x 0.92 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
Pad Con.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TGF2023-2-01 |
Qorvo |
SiC HEMT |
|
| 2 | TGF2023-2-01 |
TriQuint Semiconductor |
SiC HEMT |
|
| 3 | TGF2023-2-05 |
TriQuint Semiconductor |
25 Watt Discrete Power GaN on SiC HEMT |
|
| 4 | TGF2023-2-10 |
TriQuint Semiconductor |
50 Watt Discrete Power GaN on SiC HEMT |
|
| 5 | TGF2023-2-20 |
TriQuint |
90 Watt Discrete Power GaN on SiC HEMT |
|
| 6 | TGF2023-2-20 |
Qorvo |
SiC HEMT |
|
| 7 | TGF2023-20 |
TriQuint Semiconductor |
100 Watt Discrete Power GaN on SiC HEMT |
|
| 8 | TGF2023-01 |
TriQuint Semiconductor |
6 Watt Discrete Power GaN on SiC HEMT |
|
| 9 | TGF2023-02 |
TriQuint Semiconductor |
12 Watt Discrete Power GaN on SiC HEMT |
|
| 10 | TGF2023-05 |
TriQuint Semiconductor |
25 Watt Discrete Power GaN on SiC HEMT |
|
| 11 | TGF2023-10 |
TriQuint Semiconductor |
50 Watt Discrete Power GaN on SiC HEMT |
|
| 12 | TGF2021-01 |
TriQuint Semiconductor |
DC-12 GHz Discrete Power pHEMT |
|