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The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-01 is designed using TriQuint’s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-01 typically provides 38 dBm of sat.
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Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Measured Performance
Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.6 V Typical
Primary Applications
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Defense & Aerospace Broadband Wireless
Product Description
The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-01 is designed using TriQuint’s proven 0.25um GaN p.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TGF2023-02 |
TriQuint Semiconductor |
12 Watt Discrete Power GaN on SiC HEMT |
|
| 2 | TGF2023-05 |
TriQuint Semiconductor |
25 Watt Discrete Power GaN on SiC HEMT |
|
| 3 | TGF2023-10 |
TriQuint Semiconductor |
50 Watt Discrete Power GaN on SiC HEMT |
|
| 4 | TGF2023-2-01 |
Qorvo |
SiC HEMT |
|
| 5 | TGF2023-2-01 |
TriQuint Semiconductor |
SiC HEMT |
|
| 6 | TGF2023-2-02 |
TriQuint Semiconductor |
12 Watt Discrete Power GaN on SiC HEMT |
|
| 7 | TGF2023-2-05 |
TriQuint Semiconductor |
25 Watt Discrete Power GaN on SiC HEMT |
|
| 8 | TGF2023-2-10 |
TriQuint Semiconductor |
50 Watt Discrete Power GaN on SiC HEMT |
|
| 9 | TGF2023-2-20 |
TriQuint |
90 Watt Discrete Power GaN on SiC HEMT |
|
| 10 | TGF2023-2-20 |
Qorvo |
SiC HEMT |
|
| 11 | TGF2023-20 |
TriQuint Semiconductor |
100 Watt Discrete Power GaN on SiC HEMT |
|
| 12 | TGF2021-01 |
TriQuint Semiconductor |
DC-12 GHz Discrete Power pHEMT |
|