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TGF2023-2-02 |
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| Part Number | TGF2023-2-02 |
| Manufacturer | TriQuint Semiconductor |
| Description | The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process. This process features adv... |
| Features |
• Frequency Range: DC - 18 GHz • 40.1 dBm Nominal PSAT at 3 GHz • 73.3% Maximum PAE • 21 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional Block Diagram General Description The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. Pad Con... |
| Document |
 TGF2023-2-02 Data Sheet
PDF 1.84MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TGF2023-2-01 |
Qorvo |
SiC HEMT |
|
| 2 | TGF2023-2-01 |
TriQuint Semiconductor |
SiC HEMT |
|
| 3 | TGF2023-2-05 |
TriQuint Semiconductor |
25 Watt Discrete Power GaN on SiC HEMT |
|
| 4 | TGF2023-2-10 |
TriQuint Semiconductor |
50 Watt Discrete Power GaN on SiC HEMT |
|
| 5 | TGF2023-2-20 |
TriQuint |
90 Watt Discrete Power GaN on SiC HEMT |
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