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TGF2023-01 |
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| Part Number | TGF2023-01 |
| Manufacturer | TriQuint Semiconductor |
| Description | The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-01 is designed using TriQuint’s proven 0.25um GaN production process. This process features adv... |
| Features |
• • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm Measured Performance Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.6 V Typical Primary Applications • • www.DataSheet.net/ Defense & Aerospace Broadband Wireless Product Description The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-01 is designed using TriQuint’s proven 0.25um GaN p... |
| Document |
 TGF2023-01 Data Sheet
PDF 0.96MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TGF2023-02 |
TriQuint Semiconductor |
12 Watt Discrete Power GaN on SiC HEMT |
|
| 2 | TGF2023-05 |
TriQuint Semiconductor |
25 Watt Discrete Power GaN on SiC HEMT |
|
| 3 | TGF2023-10 |
TriQuint Semiconductor |
50 Watt Discrete Power GaN on SiC HEMT |
|
| 4 | TGF2023-2-01 |
Qorvo |
SiC HEMT |
|
| 5 | TGF2023-2-01 |
TriQuint Semiconductor |
SiC HEMT |
|