The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability.
● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
40H12K
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TGD40A |
Topstek |
Current Transducers | |
2 | TGD10A |
Topstek |
Current Transducers | |
3 | TGD14A |
Topstek |
Current Transducers | |
4 | TGD15A |
Topstek |
Current Transducers | |
5 | TGD24A |
Topstek |
Current Transducers | |
6 | TGD25A |
Topstek |
Current Transducers | |
7 | TGD30H10K |
TGD |
N-Channel Enhancement Mode Power MOSFET | |
8 | TGD30N40P |
TRinno |
Field Stop Trench IGBT | |
9 | TGD30N40P |
Trinno |
IGBT | |
10 | TGD3A |
Topstek |
Current Transducers | |
11 | TGD9A |
Topstek |
Current Transducers | |
12 | TGDxxA |
Topstek |
Topstek Current Transducer |