TGD30H10K - TGD

TGD30H10K N-Channel Enhancement Mode Power MOSFET

The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TGD30H10K General Features ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability .

Features

● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package 30H10K .