TGD30N40P - TRinno

TGD30N40P Field Stop Trench IGBT

TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE Device TGD30N40P Package D-PAK Packaging type Reel Marking TGD30N40P Remark RoHS Absol.

Features

• 400V Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy parallel Operation
• RoHS compliant
• JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE Device TGD30N40P Package D-PAK Packaging type Reel Marking TGD30N40P Remark RoHS Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum.