TC59LM913AMB - Toshiba Semiconductor

TC59LM913AMB (TC59LM905AMB / TC59LM913AMB) Network FCRAM

Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network FCRAMTM containing 536,870,912 memory cells. TC59LM913AMB is organized as 8,388,608-words × 4 banks × 16 bits, TC59LM905AMB is organized as 16,777,216-words × 4 banks × 8 bits. TC59LM913/05AMB feature a fully synchronous operation referenced to clock edge whereby .

Features

PARAMETER tCK tRC tRAC Clock Cycle Time (min) CL = 3 CL = 4 -50 5.5 ns 5.0 ns 25.0 ns 22.0 ns TBD TBD TBD TC59LM913/05 -55 6.0 ns 5.5 ns 27.5 ns 24.0 ns TBD TBD TBD -60 6.5 ns 6.0 ns 30.0 ns 26.0 ns TBD TBD TBD Random Read/Write Cycle Time (min) Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max)
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• Fully Synchronous Operation
• Double Data Rate (DDR) Data input/output are synchronized with both edges of DQS.
• Differential Clock (CLK and CLK ) inputs CS , FN and all address input sign.