TC59LM836DMB - Toshiba Semiconductor

TC59LM836DMB Network FCRAM

Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DMB is Network FCRAMTM containing 301,989,888 memory cells. TC59LM836DMB is organized as 2,097,152-words × 4 banks × 36 bits. TC59LM836DMB feature a fully synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which enables high per.

Features

PARAMETER CL = 4 tCK tRC tRAC Clock Cycle Time (min) Random Read/Write Cycle Time (min) Random Access Time (max) CL = 5 CL = 6 -30 4.0 ns 3.33 ns 3.0 ns 20.0 ns 20.0 ns 380 mA 80 mA 10 mA TC59LM836DMB -33 4.5 ns 3.75 ns 3.33 ns 22.5 ns 22.5 ns 360 mA 75 mA 10 mA -40 5.0 ns 4.5 ns 4.0 ns 25 ns 25 ns 340 mA 70 mA 10 mA IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max)
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• Fully Synchronous Operation
• Double Data Rate (DDR) Data input/output are synchronized with both edges of DS / QS.
• Differential Clock.