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TC59LM913AMB |
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| Part Number | TC59LM913AMB |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network FCRAMTM containing 536,870,912 memory cells. TC59LM913AMB is organized as 8,388,608-words × 4 banks × 16... |
| Features |
PARAMETER tCK tRC tRAC Clock Cycle Time (min) CL = 3 CL = 4 -50 5.5 ns 5.0 ns 25.0 ns 22.0 ns TBD TBD TBD TC59LM913/05 -55 6.0 ns 5.5 ns 27.5 ns 24.0 ns TBD TBD TBD -60 6.5 ns 6.0 ns 30.0 ns 26.0 ns TBD TBD TBD
Random Read/Write Cycle Time (min) Random Access Time (max)
IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max)
• • • • • • • • • • • • • Fully Synchronous Operation • Double Data Rate (DDR) Data input/output are synchronized with both edges of DQS. • Differential Clock (CLK and CLK ) inputs CS , FN and all address input sign... |
| Document |
 TC59LM913AMB Data Sheet
PDF 661.44KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC59LM914AMG-37 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
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| 2 | TC59LM914AMG-50 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
|
| 3 | TC59LM905AMB |
Toshiba Semiconductor |
(TC59LM905AMB / TC59LM913AMB) Network FCRAM |
|
| 4 | TC59LM906AMG-37 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
|
| 5 | TC59LM906AMG-50 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
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