TBC560 - Toshiba

TBC560 Silicon PNP Transistor

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC559 TBC560 PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. THE TBC559 AND TBC560 IS LOW NOISE TYPE FOR INPUT STAGE OF AUDIO AMPLIFIERS. FEATURES . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O.E35 MAX. 1 r J C.45 1! m r s CO .

Features

. High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O.E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.27 X 23J MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC559 v (BR)CBO TBC560 Collector-Emitter Breakdown Voltage TBC559 v (BR) CEO TBC560 Emitter-Base Breakdown Voltage v (BR)EBO RATING -30 -50 -25 -45 -5 Collector Current DC Peak Base Current (Peak) Collector Power Dissipation Junction Temperature Storage Temperature Range ic lCP IBP PC T J T stg -100 -2.