TBC546 - Toshiba

TBC546 Silicon NPN Transistor

: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. FEATURES . High VqeO High hpE Low Noise 65V (TBC546) 45V (TBC547) 30V (TBC548) 110-800 TBC546 TBC547 TBC548 Unit in mm 5.1 MAX. r -i . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC546 TBC547 v (BR)CBO.

Features

. High VqeO High hpE Low Noise 65V (TBC546) 45V (TBC547) 30V (TBC548) 110-800 TBC546 TBC547 TBC548 Unit in mm 5.1 MAX. r -i . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC546 TBC547 v (BR)CBO TBC548 Collector-Emitter Breakdown Voltage TBC546 TBC547 V (BR) CEO TBC548 Emitter-Base Breakdown Voltage TBC546 TBC547 V (BR)EBO TBC548 DC ic Collector Current Peak ICP Base Current (Peak) IBP Collector Power Dissipation ?C Junction Temperature Ti Storage Temperature Range L stg RATING 80 50 30 65 45 30 UNIT 100 mA 200 200 mA 500.