SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitt.
. High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitter Breakdown Voltage TBC556 TBC557 TBC558 Emitter-Base Breakdown Voltage SYMBOL v (BR)CBO v (BR)CE0 V (BR)EB0 RATING -80 -50 -30 -65 -45 -30 UNIT 1. COLLECTOR 2. BASE 3. EMITTER TOSHIBA 2-5P1Q Weight : 0.21g Collector Current Base Current (Peak) DC Peak Collector Power Dissipation Junction Temperature Storage Temperature Range ic ICP IBP PC L stg -100 mA -200 -200 mA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TBC550 |
Toshiba |
Silicon NPN Transistor | |
2 | TBC556 |
Toshiba |
Silicon PNP Transistor | |
3 | TBC557 |
Toshiba |
Silicon PNP Transistor | |
4 | TBC559 |
Toshiba |
Silicon PNP Transistor | |
5 | TBC50C04 |
Token Electronics |
Hall Current Sensor | |
6 | TBC50DS |
Token Electronics |
Hall Current Sensor | |
7 | TBC546 |
Toshiba |
Silicon NPN Transistor | |
8 | TBC547 |
Toshiba |
Silicon NPN Transistor | |
9 | TBC548 |
Toshiba |
Silicon NPN Transistor | |
10 | TBC549 |
Toshiba |
Silicon NPN Transistor | |
11 | TBC560 |
Toshiba |
Silicon PNP Transistor | |
12 | TBC-DS |
Token Electronics |
Hall Current Sensor |