TBB1010 - Renesas Technology

TBB1010 Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier

www.DataSheet4U.com TBB1010 Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier ADE-208-1607B (Z) 3rd. Edition Feb. 2003 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS ×2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. With.

Features

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• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS ×2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, DataShee Rs = 0 conditions.
• Provide mini mold packages; CMPAK-6 DataSheet4U.com Outline CMPAK-6 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. 2. Marking is “KM”. TBB1010 is individual type number of HITACHI TWIN BBFET. DataSheet4U.com www.