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TBB1010 |
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| Part Number | TBB1010 |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | www.DataSheet4U.com TBB1010 Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier ADE-208-1607B (Z) 3rd. Edition Feb. 2003 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; ... |
| Features |
• • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS ×2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, DataShee Rs = 0 conditions. • Provide mini mold packages; CMPAK-6 DataSheet4U.com Outline CMPAK-6 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. 2. Marking is “KM”. TBB1010 is individual type number of HITACHI TWIN BBFET. DataSheet4U.com www... |
| Document |
 TBB1010 Data Sheet
PDF 155.71KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TBB1012 |
Renesas Technology |
Twin Built in Biasing Circuit MOS FET IC |
|
| 2 | TBB1016 |
Renesas Technology |
Twin Built in Biasing Circuit MOSFET |
|
| 3 | TBB1017 |
Renesas Technology |
Twin Built in Biasing Circuit MOS FET IC |
|
| 4 | TBB1002 |
HITACHI |
Twin Build in Biasing Circuit MOS FET |
|
| 5 | TBB1004 |
Hitachi Semiconductor |
Twin Build in Biasing Circuit MOS FET IC |
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