TBB1004 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-988H (Z) 9th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diod.
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• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-6
Outline
CMPAK-6
www.DataSheet.co.kr
6
5
4
2 1
3
1. Drain(1) 2. Source 3. Gate-1(1) 4. Gate-1(2) 5. Gate-2 6. Drain(2)
Notes:
1. 2.
Marking is “DM”. TBB1004 is individual type number of HITACHI TWIN BBFET.
Datasheet pdf - http://www.DataSheet4U.net/
TBB1004
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TBB1002 |
HITACHI |
Twin Build in Biasing Circuit MOS FET | |
2 | TBB1005 |
Renesas |
Twin Built in Biasing Circuit MOS FET IC | |
3 | TBB1008 |
Renesas |
Twin Built in Biasing Circuit MOS FET IC | |
4 | TBB1010 |
Renesas Technology |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier | |
5 | TBB1012 |
Renesas Technology |
Twin Built in Biasing Circuit MOS FET IC | |
6 | TBB1016 |
Renesas Technology |
Twin Built in Biasing Circuit MOSFET | |
7 | TBB1017 |
Renesas Technology |
Twin Built in Biasing Circuit MOS FET IC | |
8 | TBB1458 |
Siemens |
DUAL OPERATIONAL AMPLIFIER | |
9 | TBB1458B |
Siemens |
DUAL OPERATIONAL AMPLIFIER | |
10 | TBB1458GG |
Siemens |
DUAL OPERATIONAL AMPLIFIER | |
11 | TBB1469 |
ETC |
FM EMPFANGER IC | |
12 | TBB042G |
ETC |
Bipolar IC |