SiRS4600DP - Vishay

SiRS4600DP N-Channel 60V MOSFET

www.vishay.com SiRS4600DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® SO-8S Single D D8 D7 D6 5 6.00 mm 5.00 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 60 0.00115 0.0013 81 359 Single FEATURES • TrenchFET® Gen IV power MOSF.

Features

• TrenchFET® Gen IV power MOSFET
• Very low RDS x Qg figure-of-merit (FOM)
• Leadership RDS(on) minimizes power loss from conduction
• 100 % Rg and UIS tested
• Enhance power dissipation and lower RthJC
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Synchronous rectification
• DC/DC converters
• OR-ing and hot swap switch
• Power supplies
• Motor drive control
• Battery management D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8S SiRS4600DP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25.