www.vishay.com SiRS4300DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® SO-8S Single D D8 D7 D6 5 6.00 mm 5.00 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 30 0.00040 0.00068 84 680 Single FEATURES • TrenchFET® Gen IV power MOS.
• TrenchFET® Gen IV power MOSFET
• Very low RDS x Qg figure-of-merit (FOM)
• 100 % Rg and UIS tested
• Enhance power dissipation and lower RthJC
• Leadership RDS(on) minimizes power loss from
conduction
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• DC/DC converters
• OR-ing and hot swap switch
• Battery management
D G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
PowerPAK SO-8S SiRS4300DP-T1-RE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiRS4301DP |
Vishay |
P-Channel MOSFET | |
2 | SiRS4302DP |
Vishay |
N-Channel MOSFET | |
3 | SiRS4400DP |
Vishay |
N-Channel MOSFET | |
4 | SiRS4401DP |
Vishay |
P-Channel 40V MOSFET | |
5 | SiRS4600DP |
Vishay |
N-Channel 60V MOSFET | |
6 | SIR-320ST3F |
Rohm |
Infrared light emitting diode | |
7 | SIR-341ST3F |
Rohm |
Infrared light emitting diode | |
8 | SIR-34ST3F |
Rohm |
Infrared light emitting diode | |
9 | SIR-505STA47 |
Rohm |
Infrared light emitting diode | |
10 | SIR-563ST3F |
Rohm |
Infrared light emitting diode | |
11 | SIR-568ST3 |
Rohm |
Infrared light emitting diode | |
12 | SIR-568ST3F |
Rohm |
Infrared light emitting diode |