www.vishay.com SiRS4301DP Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® SO-8S Single D D8 D7 D6 5 6.00 mm 5.00 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View -30 0.0015 0.0023 170 -227 Single FEATURES • Leadership RDS(on) minimize.
• Leadership RDS(on) minimizes power loss from conduction
• 100 % Rg and UIS tested
• Enhance power dissipation and lower RthJC
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Adapter and charger switch
• Load switch
• Motor drive control
• Battery management
S G
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
PowerPAK SO-8S SiRS4301DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
VDS VGS TC = 25 °C
Continuous dr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiRS4300DP |
Vishay |
N-Channel MOSFET | |
2 | SiRS4302DP |
Vishay |
N-Channel MOSFET | |
3 | SiRS4400DP |
Vishay |
N-Channel MOSFET | |
4 | SiRS4401DP |
Vishay |
P-Channel 40V MOSFET | |
5 | SiRS4600DP |
Vishay |
N-Channel 60V MOSFET | |
6 | SIR-320ST3F |
Rohm |
Infrared light emitting diode | |
7 | SIR-341ST3F |
Rohm |
Infrared light emitting diode | |
8 | SIR-34ST3F |
Rohm |
Infrared light emitting diode | |
9 | SIR-505STA47 |
Rohm |
Infrared light emitting diode | |
10 | SIR-563ST3F |
Rohm |
Infrared light emitting diode | |
11 | SIR-568ST3 |
Rohm |
Infrared light emitting diode | |
12 | SIR-568ST3F |
Rohm |
Infrared light emitting diode |