SiHP30N60E - Vishay

SiHP30N60E Power MOSFET

www.vishay.com SiHP30N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 130 15 39 Single 0.125 D TO-220AB G S D G S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and.

Features

• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of Available compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting - LED lighting
• Industrial - Welding - Induction heating - Motor drives
• Battery chargers
• Renewable energy - So.