SIHP16N50C - Vishay Siliconix

SIHP16N50C Power MOSFET

www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 68 17.6 21.8 Single TO-220AB TO-220 FULLPAK 0.38 D FEATURES • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Co.

Features

• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
• Trr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC Note
* Pb containing terminations are not RoHS compliant, exemptions may apply S D G D2PAK (TO-263) GDS G GD S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB SiHP16N50C-E3 Lead (Pb)-free - - D2PAK (TO-263) SiHB16N50C-E3 SiHB16N50CTR-E3 SiHB16N50CTL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Dra.