SiHP18N50C - Vishay

SiHP18N50C Power MOSFET

www.vishay.com SiHP18N50C Vishay Siliconix Power MOSFET TO-220AB D S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 76 21 29 Single 0.225 FEATURES • Low figure-of-merit Ron x Qg • 100 % avalanche tested Available • High peak current capability • dv/dt ruggednes.

Features

• Low figure-of-merit Ron x Qg
• 100 % avalanche tested Available
• High peak current capability
• dv/dt ruggedness Available
• Improved trr/Qrr
• Improved gate charge
• High power dissipations capability
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details  ORDERING INFORMATION Packag.