SiHFB16N50K - Vishay Siliconix

SiHFB16N50K Power MOSFET

IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 89 27 43 Single 0.285 D TO-220 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improve.

Features

• Low Gate Charge Qg Results in Simple Drive Requirement Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS
* COMPLIANT Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Low RDS(on)
• Lead (Pb)-free Available APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits TO-220 IRFB16N50KPbF SiHFB16N50K-E3 IRFB16N50K SiHFB16N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuou.