SiHFB11N50A - Vishay Siliconix

SiHFB11N50A Power MOSFET

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 52 13 18 Single D FEATURES 500 0.52 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and .

Features

500 0.52
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and current
• Lead (Pb)-free Available Available RoHS
* COMPLIANT www.DataSheet4U.com APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching TO-220 G APPLICABLE OFF LINE SMPS TOPOLOGIES S G D S N-Channel MOSFET
• Two Transistor Forward
• Half and Full Bridge
• Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFB11N50APbF .