SiHFB13N50A - Vishay Siliconix

SiHFB13N50A Power MOSFET

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 81 20 36 Single D TO-220AB 0.450 G S D G ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET SnPb FEATURES • Lower Gate Charge Qg Results in Simpler Drive Reqirements Available • Improv.

Features

• Lower Gate Charge Qg Results in Simpler Drive Reqirements Available
• Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supplies
• High Speed Power Switching TO-220AB IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A SiHFB13N50A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Currenta Linear D.