The SiC639 are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 5 mm x 5 mm MLP package, SiC639 enables voltage regulator designs to deliver up to 50 A continuous current per phase. The internal power MOSFETs utilizes Visha.
high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, a thermal warning (THWn) that alerts the system of excessive junction temperature, and zero current detection to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3 V / 5 V PWM logic.
FEATURES
• Thermally enhanced PowerPAK® MLP55-31L
package
• Vishay’s Gen IV MOSFET technology and a low
side MOSFET with integrated Schottky diode
• Delivers up to 50 A continuous current
• High efficiency performance
• High frequency.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIC631 |
Vishay |
Integrated Power Stage | |
2 | SIC632 |
Vishay |
Integrated Power Stage | |
3 | SIC632A |
Vishay |
Integrated Power Stage | |
4 | SiC634 |
Vishay |
Integrated Power Stage | |
5 | SiC620AR |
Vishay |
Power Stage | |
6 | SiC620R |
Vishay |
Power Stage | |
7 | SIC645 |
Vishay |
60A VRPower Smart Power Stage (SPS) Module | |
8 | SIC02A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
9 | SIC02A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
10 | SIC02A120S |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
11 | SIC02C60 |
CITC |
2A SiC Schottky Diode | |
12 | SIC04A065ND |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |