Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2328 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.300 @ VGS = 10 V ID (A) 1.5 (SOT-23) G1 S2 3D Top View Si2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Volt.
30 45 Maximum 100 170 55 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2328 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time ID(on) rDS(on) gfs VS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI2320DS |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SI2321 |
MCC |
P-Channel MOSFET | |
3 | SI2321 |
BLUE ROCKET ELECTRONICS |
P-CHANNEL MOSFET | |
4 | SI2321DS |
Vishay Siliconix |
P-Channel MOSFET | |
5 | SI2323DS |
Vishay Siliconix |
P-Channel MOSFET | |
6 | SI2324 |
MCC |
N-Channel MOSFET | |
7 | SI2324A |
MCC |
N-Channel MOSFET | |
8 | SI2324DS |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SI2325DS |
Vishay |
P-Channel MOSFET | |
10 | SI2327DS |
Vishay |
P-Channel MOSFET | |
11 | SI2328DS |
Vishay Siliconix |
N-Channel MOSFET | |
12 | SI2300 |
Kexin |
N-Channel MOSFET |