SI2323DS - Vishay Siliconix

SI2323DS P-Channel MOSFET

P-Channel 20-V (D-S) MOSFET Si2323DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.039 at VGS = - 4.5 V - 20 0.052 at VGS = - 2.5 V 0.068 at VGS = - 1.8 V ID (A) - 4.7 - 4.1 - 3.5 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • PA Switch TO-236 (SOT-23) G1 S2 3D Top Vie.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET APPLICATIONS
• Load Switch
• PA Switch TO-236 (SOT-23) G1 S2 3D Top View Si2323DS (D3)
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* Marking Code Ordering Information: Si2323DS-T1 Si2323DS-T1-E3 (Lead (Pb)-free) Si2323DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID - 4.7 - 3.8 - 3.7 - 2.9 Pulsed Drain Current IDM - 20 Continuo.