SI2321DS - Vishay Siliconix

SI2321DS P-Channel MOSFET

P-Channel 20-V (D-S) MOSFET Si2321DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.057 at VGS = - 4.5 V - 20 0.076 at VGS = - 2.5 V 0.110 at VGS = - 1.8 V ID (A) - 3.3 - 2.8 - 2.3 TO-236 (SOT-23) G1 S2 3D FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETS APPLICATIONS • Load Switch • PA Switch Top View Si2321DS *(D1) * M.

Features

• Halogen-free Option Available
• TrenchFET® Power MOSFETS APPLICATIONS
• Load Switch
• PA Switch Top View Si2321DS
*(D1)
* Marking Code Ordering Information: Si2321DS-T1-E3 (Lead (Pb)-free) Si2321DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 3.3 - 2.6 - 2.9 - 2.3 Pulsed Drain Current IDM - 12 Continuous Source Current (Diode Conduction)a IS - 0.74 - 0.59 Pow.