Si2302DDS - Vishay

Si2302DDS N-Channel MOSFET

www.vishay.com Si2302DDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: O2 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V Qg typ. (nC) ID (A) Configuration 2 S 20 0.057 0.075 3.5 2.9 Single FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Material categorizati.

Features

• TrenchFET® power MOSFET
• 100 % Rg tested
• Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Load switching for portable devices
• DC/DC converter G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2302DDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 5s Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) a Pulsed drain current (t = 300 μs) b Continuous source current (diode conduction) a Power dissipation a Operatin.