SI2302DS - NXP

SI2302DS N-channel FET

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pi.

Features

s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 Simplified outline Symbol source (s) drain (d) g 1 Top view 2 MSB003 MBB076 d s SOT23 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Pto.