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Si2302DDS |
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| Part Number | Si2302DDS |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com Si2302DDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: O2 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () a... |
| Features |
• TrenchFET® power MOSFET • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2302DDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 5s Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) a Pulsed drain current (t = 300 μs) b Continuous source current (diode conduction) a Power dissipation a Operatin... |
| Document |
 Si2302DDS Data Sheet
PDF 230.43KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SI2302DS |
Kexin |
N-Channel MOSFET |
|
| 2 | SI2302DS |
NXP |
N-channel FET |
|
| 3 | SI2302DS |
Vishay |
N-Channel MOSFET |
|
| 4 | SI2302DS-HF |
Kexin |
N-Channel MOSFET |
|
| 5 | SI2302DS-T1-GE3 |
VBsemi |
N-Channel MOSFET |
|