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SI2300 - CCSemi

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SI2300 N-Channel MOSFET

MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 Features ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃ -Pulsed Power Dissipation* Thermal Resistance,.

Features

◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous
* TJ=125℃ -Pulsed Power Dissipation
* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range
*Surface Mounted on FR4 Board, t≤10sec. Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 20 ±10 3.8 15 1.25 100 -55 to 150 Unit V V A A W ℃/W ℃ www.canctech.com Revision 2016/8/15 @2016-2017 CCSemi . MOSFET Electrical Characteristics Ta=25℃.

The same part from a different manufacturer

Datasheet Si2300 - JinYu Si2300

20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80mΩ .

Datasheet Si2300 - HAOCHANG Si2300

SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS SI2300 N-Channel Enhancement MOSFET Feat.

Datasheet Si2300 - MCC Si2300

MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley, CA 93065 Tel:818-70.

Datasheet Si2300 - SiPU Si2300

Si2300 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged.

Datasheet Si2300 - Kexin Si2300

SMD Type N-Channel Enhancement MOSFET SI2300 (KI2300) MOSFIECT Features VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A.

Datasheet Si2300 - HOTTECH Si2300

Plastic-Encapsulate Mosfets FEATURES Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resis.

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