SI2301B - UMW

SI2301B P-Channel MOSFET

UMW R UMW SI2301B UMW SI2301B P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V 120 mΩ@-4.5V 150 mΩ@-2.5V ID 2.5 A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING A1SHB Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symb.

Features

b Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Symbol Test Condition V(BR)DSS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0V, ID =-250µA VDS =VGS, ID =-250µA VDS =0V, VGS =±8V VDS =-20V, VGS =0V VGS =-4.5V, ID =-2.8A VGS =-2.5V, ID =-2.0A VDS =-5V, ID =-2.8A Ciss Coss VDS =-10V,VGS =0V,f =1MHz Crss VDS =-10V,VGS =-4.5V,ID =-3A Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Drain-source body diode characteristics VDS =-10V,VGS =-2.5V,ID =-3A .