SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Management.
-30A,-100V,RDS(on)(typ.) =35m@VGS=-10V Low gate charge Low Crss Fast switching Improved dv/dt capability 100% avalanche tested Pb-free lead plating RoHS compliant 1 3 TO-252-2L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings -100 -1.5~-2.5 50 -30 80 Unit V V m A nC ORDERING INFORMATION Part No. SVT10500PDTR Package TO-252-2L Marking 10500PD Hazardous Substance Control Halogen free Packing Type Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.0 Page 1 of 9 Silan Microelectronics SVT10500PD_D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SVT10100U |
Pan Jit International |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER | |
2 | SVT10100UB |
Pan Jit International |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER | |
3 | SVT10111ND |
Silan Microelectronics |
100V N-CHANNEL MOSFET | |
4 | SVT10120V |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
5 | SVT10120VB |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
6 | SVT10150V |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
7 | SVT10150VB |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
8 | SVT1040 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
9 | SVT1040SA |
Silan Microelectronics |
N-CHANNEL MOSFET | |
10 | SVT1080XB |
Pan Jit International |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER | |
11 | SVT120N08S |
Silan Microelectronics |
80V N-CHANNEL MOSFET | |
12 | SVT120N08T |
Silan Microelectronics |
80V N-CHANNEL MOSFET |