SVT1040SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos technology. The improved trench stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation.
10A, 40V, RDS(on)(typ.)=15m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 78 56 2 4 1 1、3. Source 3 2、4. Gate 7、8;5、6. Drain 8 1 23 4 SOP-8-225-1.27 ORDERING INFORMATION Part No. SVT1040SA SVT1040SATR Package SOP-8-225-1.27 SOP-8-225-1.27 Marking SVT1040 SVT1040 Hazardous substance control Halogen free Halogen free Packing Tube Tape & reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 1 of 8 Silan Microelectronics SVT1040SA_Datasheet ABSOLUTE MAXIMUM RATINGS (PER DEVICE, UNLESS OTHERWISE NOTED, TJ=25C) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SVT1040 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
2 | SVT10100U |
Pan Jit International |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER | |
3 | SVT10100UB |
Pan Jit International |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER | |
4 | SVT10111ND |
Silan Microelectronics |
100V N-CHANNEL MOSFET | |
5 | SVT10120V |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
6 | SVT10120VB |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
7 | SVT10150V |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
8 | SVT10150VB |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
9 | SVT10500PD |
Silan Microelectronics |
P-CHANNEL MOSFET | |
10 | SVT1080XB |
Pan Jit International |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER | |
11 | SVT120N08S |
Silan Microelectronics |
80V N-CHANNEL MOSFET | |
12 | SVT120N08T |
Silan Microelectronics |
80V N-CHANNEL MOSFET |