SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is wide.
14A,100V, RDS(on)(typ.)=85m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L S V TX X X R X N X Silan Low voltage trench MOS products Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V Package information. Example: T:TO-220; D:TO- 252; MJ:TO-251J; Channel polarity: N denotes N channel, P denotes P channel Resistance: R75 denotes 0.7mΩ;7R5 denotes 7.5mΩ; 100 denotes 10mΩ; 101 denotes 100mΩ ORDERING INFORMATION Part No. SVT10111NDTR Package TO-252-2L Marking 10111ND Hazard.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SVT10100U |
Pan Jit International |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER | |
2 | SVT10100UB |
Pan Jit International |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER | |
3 | SVT10120V |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
4 | SVT10120VB |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
5 | SVT10150V |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
6 | SVT10150VB |
Pan Jit International |
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER | |
7 | SVT1040 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
8 | SVT1040SA |
Silan Microelectronics |
N-CHANNEL MOSFET | |
9 | SVT10500PD |
Silan Microelectronics |
P-CHANNEL MOSFET | |
10 | SVT1080XB |
Pan Jit International |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER | |
11 | SVT120N08S |
Silan Microelectronics |
80V N-CHANNEL MOSFET | |
12 | SVT120N08T |
Silan Microelectronics |
80V N-CHANNEL MOSFET |