SVD640S - Silan Microelectronics

SVD640S 200V N-CHANNEL MOSFET

SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commuta.

Features

 18A,200V,RDS(on)(typ.)=0.12@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVD640T SVD640D SVD640DTR SVD640S SVD640STR Package TO-220-3L TO-252-2L TO-252-2L TO-263-2L TO-263-2L Marking SVD640T SVD640D SVD640D SVD640S SVD640S Hazardous Substance Control Pb free Halogen free Halogen free Halogen free Halogen free Packing Type Tube Tube Tape&Reel Tube Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.4 Page 1 of 9 Silan Microelectronics SVD640T/D/S_Datasheet.