SVD640F - Silan Microelectronics

SVD640F 200V N-CHANNEL MOSFET

SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan.

Features

 18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVD640T SVD640D SVD640DTR SVD640F Package TO-220-3L TO-252-2L TO-252-2L TO-220F-3L Marking SVD640T SVD640D SVD640D SVD640F Material Pb free Halogen free Halogen free Pb free Packing Tube Tube Tape & Reel Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Pulsed Current TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanc.