SVD1055SA - Silan Microelectronics

SVD1055SA 55V N/P-CHANNEL MOSFET

SVD1055SA is a combination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the.

Features

 Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVD1055SA SVD1055SATR Package SOP-8-225-1.27 SOP-8-225-1.27 Marking SVD1055SA SVD1055SA Hazardous substance control Halogen free Halogen free ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation(TC=25C) Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg N-ch.