SUD50P10-43 - Vishay

SUD50P10-43 P-Channel MOSFET

SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V (D-S) 175 _C MOSFET PRODUCT SUMMARY VDS (V) –100 FEATURES D TrenchFETr Power MOSFET ID (A)a Qg (Typ) 105 nC –38 rDS(on) (W) 0.043 at VGS = –10 V RoHS COMPLIANT TO-252 S G Drain Connected to Tab G D S D P-Channel MOSFET Top View Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free) ABSOLUTE MA.

Features

D TrenchFETr Power MOSFET ID (A)a Qg (Typ) 105 nC
  –38 rDS(on) (W) 0.043 at VGS =
  –10 V RoHS COMPLIANT TO-252 S G Drain Connected to Tab G D S D P-Channel MOSFET Top View Ordering Information: SUD50P10-43
  –E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 175 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current Source Drain Diode Current Continuous Source-Drain Avalanche Current Single-Pulse Avalanche Energy L=0 0.1 1 mH TC = 25 _C Maximum Power Dissipation TC =.