SUD50P08-25L - Vishay

SUD50P08-25L P-Channel MOSFET

New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 80 0.0252 at VGS = - 10 V 0.029 at VGS = - 4.5 V ID (A)a - 50 - 47 Qg (Typ) 55 nC TO-252 FEATURES • TrenchFET® Power MOSFET S RoHS COMPLIANT G GDS Top View Drain Connected to Tab Ordering Information: SUD50P08-25L-E3 (Lead (Pb)-fr.

Features

• TrenchFET® Power MOSFET S RoHS COMPLIANT G GDS Top View Drain Connected to Tab Ordering Information: SUD50P08-25L-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C T.