SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) –40 rDS(on) (W) 0.015 @ VGS = –10 V 0.023 @ VGS = –4.5 V ID (A) –50 –45 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50P04-15 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Vo.
hJA RthJC
Typical
15 40 1.2
Maximum
18 50 1.5
Unit
_C/W
1
SUD50P04-15
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID =
–250 mA VDS = VGS, ID =
–250 mA VDS = 0 V, VGS = "20 V VDS =
–40 V, VGS = 0 V VDS =
–40 V, VGS = 0 V, TJ = 125_C VDS =
–5 V, VGS =
–10 V VGS =
–10 V, ID =
–30 A
a Drain-Source On-State Resistance D i S O S R i
Symbol
Test Condition
Min
Typ
Max
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUD50P04-13L |
Vishay Siliconix |
P-Channel MOSFET | |
2 | SUD50P04-08 |
Vishay |
P-Channel MOSFET | |
3 | SUD50P04-08 |
INCHANGE |
P-Channel MOSFET | |
4 | SUD50P04-09L |
Vishay Siliconix |
P-Channel MOSFET | |
5 | SUD50P04-40P |
Vishay |
P-Channel MOSFET | |
6 | SUD50P06-15 |
INCHANGE |
P-Channel MOSFET | |
7 | SUD50P06-15 |
Vishay |
P-Channel MOSFET | |
8 | SUD50P06-15L |
Vishay Siliconix |
P-Channel MOSFET | |
9 | SUD50P08-25L |
Vishay |
P-Channel MOSFET | |
10 | SUD50P08-26 |
Vishay |
P-Channel MOSFET | |
11 | SUD50P10-43 |
Vishay |
P-Channel MOSFET | |
12 | SUD50P10-43L |
Vishay |
P-Channel MOSFET |