SUD50N025-4m5P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 25 0.0045 at VGS = 10 V 0.0060 at VGS = 4.5 V ID (A)a, d 50 50 Qg (Typ.) 36.25 nC TO-252 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • DC/DC Conversion, Low-Side - Desktop PC - Server D RoHS COMPLIANT GDS Top View Drain Con.
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• DC/DC Conversion, Low-Side
- Desktop PC - Server
D
RoHS
COMPLIANT
GDS Top View
Drain Connected to Tab
Ordering Information: SUD50N025-4m5P-E3 (Lead (Pb)-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Repetitive Avalanche Energy
L = 0.1 mH
IAS EAS
Continuous Source-Drain Diod.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUD50N025-05P |
Vishay |
N-Channel MOSFET | |
2 | SUD50N025-06P |
Vishay |
N-Channel MOSFET | |
3 | SUD50N025-09BP |
Vishay |
N-Channel MOSFET | |
4 | SUD50N025-25P |
Vishay Siliconix |
N-Channel MOSFET | |
5 | SUD50N02-04P |
Vishay Siliconix |
P-Channel MOSFET | |
6 | SUD50N02-06P |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SUD50N02-09P |
Vishay Siliconix |
N-Channel MOSFET | |
8 | SUD50N02-11P |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SUD50N02-12P |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SUD50N024-06P |
Vishay Siliconix |
P-Channel MOSFET | |
11 | SUD50N024-09P |
Vishay Siliconix |
P-Channel MOSFET | |
12 | SUD50N03-06AP |
Vishay Siliconix |
N-Channel MOSFET |