STW7NA90FI - ST Microelectronics

STW7NA90FI N-CHANNEL MOSFET

® STW7NA90 STH7NA90FI N - CHANNEL 900V - 1.05Ω - 7A - TO-247/ISOWATT218 FAST POWER MOSFET TYPE STW 7NA90 STH7NA90F I s s s s s s s V DSS 900 V 900 V R DS(on) < 1.3 Ω < 1.3 Ω ID 7 A 4.7 A TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED R.

Features

thstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value ST W7NA90 STH7NA90F I 900 900 ± 30 7 4 30 190 1.52 −−−−−− -65 to 150 150 4.7 3 30 70 0.56 4000 Un it V V V A A A W W /o C V o o C C (
•) Pulse width limited by safe operating area October 1998 1/9 STW7NA90 - STH7NA90FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.65 30 0.1 300 ISOWATT 218 1.78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose AVALANCHE CHARACT.