STW7NA100 - ST Microelectronics

STW7NA100 N-CHANNEL MOSFET

STW7NA100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STW7NA100 STH7NA100FI s s s s s s V DSS 1000 V 1000 V R DS(on) < 1.7 Ω < 1.7 Ω ID 7A 4.3 A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 3 2 1 .

Features

erature Max. Operating Junction Temperature o Unit STH7NA100FI V V V 4.3 2.7 28 70 0.56 4000 A A A W W/ o C V o o 1000 1000 ± 30 7 4.4 28 190 1.52  -65 to 150 150 C C 1/6 (
•) Pulse width limited by safe operating area STW7NA100-STH7NA100FI THERMAL DATA TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.65 30 0.1 300 ISOWATT218 1.78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive o.