® STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 7NA80 STH7NA80F I V DSS 800 V 800 V R DS(on) < 1.9 Ω < 1.9 Ω ID 6.5 A 4 A s s s s s s s TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRE.
d Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH7NA80FI 800 800 ± 30 V V V 4 2.5 26 60 0.48 4000 A A A W W /o C V
o o
6.5 4 26 150 1.2 -65 to 150 150
C C
(
•) Pulse width limited by safe operating area
October 1998
1/10
STW7NA80-STH7NA80FI
THERMAL DATA
TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOWATT 218 2.08
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STW7NA80 |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STW7NA100 |
ST Microelectronics |
N-CHANNEL MOSFET | |
3 | STW7NA100FI |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | STW7NA90 |
ST Microelectronics |
N-CHANNEL MOSFET | |
5 | STW7NA90FI |
ST Microelectronics |
N-CHANNEL MOSFET | |
6 | STW7N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STW7N95K3 |
STMicroelectronics |
Power MOSFET | |
8 | STW7NB80 |
ST Microelectronics |
N-CHANNEL MOSFET | |
9 | STW7NC80Z |
ST Microelectronics |
N-CHANNEL MOSFET | |
10 | STW7NC90Z |
ST Microelectronics |
N-CHANNEL MOSFET | |
11 | STW7NK90Z |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STW70N10F4 |
STMicroelectronics |
N-CHANNEL MOSFET |