STW65N023M9-4 - STMicroelectronics

STW65N023M9-4 N-channel Power MOSFET

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and.

Features

Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92
• Worldwide best FOM RDS(on)
*Qg among silicon-based devices
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance thanks to the extra driving source pin
• Easy to drive
• 100% avalanche tested Gate(4) Driver source(3) Applications
• High efficiency switching applications Power source(2) ND1TPS2DS3G4 Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silico.